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BFG410W_2015 Datasheet, PDF (2/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 22 GHz wideband transistor | |||
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Philips Semiconductors
NPN 22 GHz wideband transistor
Product speciï¬cation
BFG410W
FEATURES
⢠Very high power gain
⢠Low noise figure
⢠High transition frequency
⢠Emitter is thermal lead
⢠Low feedback capacitance.
PINNING
PIN
1
2
3
4
DESCRIPTION
emitter
base
emitter
collector
APPLICATIONS
⢠RF front end
⢠Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
⢠Radar detectors
⢠Pagers
⢠Satellite television tuners (SATV)
⢠High frequency oscillators.
handbook, halfpage
3
4
2
Top view
1
MSB842
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
Marking code: P4.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
hFE
Cre
fT
Gmax
F
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum power gain
noise ï¬gure
CONDITIONS
MIN.
open emitter
â
open base
â
â
Ts ⤠110 °C
â
IC = 10 mA; VCE = 2 V; Tj = 25 °C
50
IC = 0; VCB = 2 V; f = 1 MHz
â
IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C â
IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C â
IC = 1 mA; VCE = 2 V; f = 2 GHz; ÎS = Îopt
â
TYP.
â
â
10
â
80
45
22
21
1.2
MAX. UNIT
10 V
4.5 V
12 mA
54 mW
120
â
fF
â
GHz
â
dB
â
dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Mar 11
2
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