BFG410W_2015 Datasheet, PDF (4/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 22 GHz wideband transistor

Philips Semiconductors
NPN 22 GHz wideband transistor
Product specification
BFG410W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_(BR)CBO
V_(BR)CEO
collector-base breakdown voltage
collector-emitter breakdown
voltage
V_(BR)EBO
I_CBO
h_FE
C_c
C_e
C_re
emitter-base breakdown voltage
collector-base leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
f_T
transition frequency
G_max
maximum power gain; note 1
S₂₁ ²
F
insertion power gain
noise figure
P_L1
output power at 1 dB gain
compression
ITO
third order intercept point
CONDITIONS
I_C = 2.5 µA; I_E = 0
I_C = 1 mA; I_B = 0
MIN.
10
4.5
I_E = 2.5 µA; I_C = 0
1
I_E = 0; V_CB = 4.5 V
−
I_C = 10 mA; V_CE = 2 V; see Fig.3 50
I_E = i_e = 0; V_CB = 2 V; f = 1 MHz −
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz −
I_C = 0; V_CB = 2 V; f = 1 MHz;
−
see Fig.4
I_C = 10 mA; V_CE = 2 V; f = 2 GHz; −
T_amb = 25 °C; see Fig.5
I_C = 10 mA; V_CE = 2 V; f = 2 GHz; −
T_amb = 25 °C; see Figs 7 and 8
I_C = 10 mA; V_CE = 2 V; f = 2 GHz; −
T_amb = 25 °C; see Fig.8
I_C = 1 mA; V_CE = 2 V;
−
f = 900 MHz; Γ_S = Γ_opt; see Fig.13
I_C = 1 mA; V_CE = 2 V; f = 2 GHz; −
Γ_S = Γ_opt; see Fig.13
I_C = 10 mA; V_CE = 2 V; f = 2 GHz; −
Z_S = Z_{S opt}; Z_L = Z_{L opt}; note 2
I_C = 10 mA; V_CE = 2 V; f = 2 GHz; −
Z_S = Z_{S opt}; Z_L = Z_{L opt}; note 2
TYP.
−
−
−
−
80
220
400
45
22
21
18
0.9
1.2
5
15
MAX. UNIT
−
V
−
V
−
V
15
nA
120
−
fF
−
fF
−
fF
−
GHz
−
dB
−
dB
−
dB
−
dB
−
dBm
−
dBm
Notes
1. G_max is the maximum power gain, if K > 1. If K < 1 then G_max = MSG; see Figs 6, 7 and 8.
2. Z_S is optimized for noise; Z_L is optimized for gain.
1998 Mar 11
4