BFT25A_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
BFT25A
NPN 5 GHz wideband transistor
Table 8:
f (MHz)
Noise parameters
V_CE (V)
I_C (mA)
500
1
1
F_min (dB)
1.9
Γ_opt
(mag)
0.79
(ang)
4
R_n/50
2.5
0.5
0.2
1
pot. unst.
region
+j
0
−j
0.2
0.2
0.5
1
MSG
11.2 dB
10 dB
8 dB
2
8 dB
4 dB
3 dB
2
5 10
stability
circle
5
10
∞
Γ_opt
F_min = 2 dB
10
5
0.5
1
See Table 9;
Z_o = 50 Ω.
Average gain parameter: MSG = 11.2 dB.
Fig 12. Noise circle figure.
2
mcd109
Table 9:
f (MHz)
Noise parameters
V_CE (V)
I_C (mA)
1 000
1
1
F_min (dB)
2
Γ_opt
(mag)
0.74
(ang)
8
R_n/50
2.6
9397 750 13399
Product data sheet
Rev. 04 — 6 July 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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