BFT25A_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
BFT25A
NPN 5 GHz wideband transistor
25
gain
(dB)
20
G_UM
mcd104
15
MSG
10
5
0
0
0.5
1.0
1.5
2.0
I_C (mA)
V_CE = 1 V; f = 500 MHz.
Fig 5. Gain as a function of collector current.
50
gain
(dB)
40
30
G_UM
mcd106
20
MSG
10
G_max
0
10
10²
10³ _{f (MHz)} 10⁴
V_CE = 1 V; I_C = 0.5 mA.
Fig 7. Gain as a function of frequency.
20
gain
(dB)
15
G_UM
mcd105
10
MSG
5
0
0
0.5
1.0
1.5
2.0
I_C (mA)
V_CE = 1 V; f = 1 GHz.
Fig 6. Gain as a function of collector current.
50
gain
(dB)
40
30
20
G_UM
MSG
mcd107
10
G_max
0
10
10²
10³ _{f (MHz)} 10⁴
V_CE = 1 V; I_C = 1 mA.
Fig 8. Gain as a function of frequency.
9397 750 13399
Product data sheet
Rev. 04 — 6 July 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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