BFT25A_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
BFT25A
NPN 5 GHz wideband transistor
40
P_tot
(mW)
30
mbg247
20
10
0
0
50
100
150
200
T_s (°C)
Fig 1. Power derating curve.
100
h_FE
80
mcd138
60
40
20
0
10^−3
10^−2
10^−1
1
10
I_C (mA)
V_CE = 1 V.
Fig 2. DC current gain as a function of collector
current.
0.4
C_re
(pF)
0.3
0.2
0.1
mcd103
6
f_T
(GHz)
4
2
mcd140
0
0
1
2
3
4
5
V_CB (V)
I_C = i_c = 0 A; f = 1 MHz.
Fig 3. Feedback capacitance as a function of
collector-base voltage.
0
0
1
2
3
4
I_C (mA)
V_CE = 1 V; T_amb = 25 °C; f = 500 MHz.
Fig 4. Transition frequency as a function of collector
current.
Figure 5, 6, 7 and 8, G_UM = maximum unilateral power gain; MSG = maximum stable gain.
9397 750 13399
Product data sheet
Rev. 04 — 6 July 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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