BFT25A_15 Datasheet, PDF (2/14 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
BFT25A
NPN 5 GHz wideband transistor
2. Pinning information
Table 2: Discrete pinning
Pin
Description
Code: V10
1
base
2
emitter
3
collector
Simplified outline Symbol
3
1
2
SOT23
3
1
2
sym021
3. Ordering information
Table 3: Ordering information
Type number Package
Name Description
BFT25A
-
plastic surface mounted package; 3 leads
4. Marking
Table 4: Marking
Type number
BFT25A
[1] * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
5. Limiting values
Marking code ^[1]
34*
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to T_s = 165 °C
-
-
-
-
[1] _-
−65
-
[1] T_s is the temperature at the soldering point of the collector tab.
Version
SOT23
Max Unit
8
V
5
V
2
V
6.5
mA
32
mW
+150 °C
175
°C
9397 750 13399
Product data sheet
Rev. 04 — 6 July 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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