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| BFT25A_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor | |||
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Philips Semiconductors
BFT25A
NPN 5 GHz wideband transistor
6. Thermal characteristics
Table 6:
Symbol
Rth(j-s)
Thermal characteristics
Parameter
from junction to soldering point
Conditions
[1] Ts is the temperature at the soldering point of the collector tab.
7. Characteristics
Typ
[1] 260
Unit
K/W
Table 7: Characteristics
Tj = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Min
Typ
ICBO
collector cut-off IE = 0 A; VCB = 5 V
current
-
-
hFE
DC current gain IC = 0.5 mA; VCE = 1 V
50
80
fT
transition
IC = 1 mA; VCE = 1 V;
3.5
5
frequency
Tamb = 25 °C;
f = 500 MHz
Cre
feedback
IC = ic = 0 A; VCB = 1 V;
-
0.3
capacitance
f = 1 MHz
GUM
maximum
IC = 0.5 mA; VCE = 1 V; [1] -
15
unilateral power Tamb = 25 °C; f = 1 GHz
gain
F
noise ï¬gure
Î = Îopt; IC = 0.5 mA;
-
1.8
VCE = 1 V;
Tamb = 25 °C; f = 1 GHz
Î = Îopt; IC = 1 mA;
-
2
VCE = 1 V;
Tamb = 25 °C; f = 1 GHz
[1] GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log-(--1----â------S----1--1----S2---)2--(1---1-2---â------S---2---2----2--)-dB
Max Unit
50
nA
200
-
GHz
0.45 pF
-
dB
-
dB
-
dB
9397 750 13399
Product data sheet
Rev. 04 â 6 July 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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