BFR520_2015 Datasheet, PDF (7/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR520
handbook, h⁵alfpage
Fmin
(dB)
4
3
2 _{2000 MHz}
1000 MHz
1 _{900 MHz}
500 MHz
0
1
V_CE = 6 V.
MRA714
20
Gass
f = 900 MHz
1000 MHz
(dB)
15
Gass
10
2000 MHz
5
Fmin
0
10
IC (mA)
−5
10²
Fig.10 Minimum noise figure and associated
available gain as functions of collector
current.
5
handbook, halfpage
Fmin
IC
=
5
mA
(dB)
4
20 mA
Gass
MRA715
20
Gass
(dB)
15
3
10
2
20 mA
1 _{5 mA}
0
10²
V_CE = 6 V.
Fmin
10³
f (MHz)
5
0
−5
10⁴
Fig.11 Minimum noise figure and associated
available gain as functions of frequency.
handbook, full pagewidth
pot. unst.
region
135°
stability
circle _90°
1
0.5
2
45°
0.2
0.2
180° 0
0.2
Fmin = 1. 1 dB
5
Γ_OPT
0.5
1
2
5
F = 1.5 dB
F = 2 dB
5
F = 3 dB
1.0
0.8
0.6
0.4
0.2
0° 0
Z_o = 50 Ω.
V_CE = 6 V; I_C = 5 mA; f = 900 MHz.
0.5
−135°
1
−90°
2
−45°
MRA716
1.0
Fig.12 Noise circle figure.
September 1995
7