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| BFR520_2015 Datasheet, PDF (4/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor | |||
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product speciï¬cation
BFR520
CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
Ce
emitter capacitance
Cc
collector capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral
power gain (note 1)
S212
F
insertion power gain
noise ï¬gure
PL1
output power at 1 dB gain
compression
ITO
third order intercept point
CONDITIONS
IE = 0; VCB = 6 V
IC = 20 mA; VCE = 6 V
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 6 V; f = 1 MHz
IC = 0; VCB = 6 V; f = 1 MHz
IC = 20 mA; VCE = 6 V; f = 1 GHz
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
Îs = Îopt; IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
Îs = Îopt; IC = 20 mA; VCE = 6 V;
Tamb = 25 °C; f = 900 MHz
Îs = Îopt; IC = 5 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
IC = 20 mA; VCE = 6 V; RL = 50 â¦;
Tamb = 25 °C; f = 900 MHz
note 2
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log -ï£ï£«---1-----â------S----1---1----2S----2--ï£ï£«-1---1-2----â------S----2--2-----2---- dB.
2. IC = 20 mA; VCE = 6 V; RL = 50 â¦; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at f(2pâq) = 898 MHz and f(2qâp) = 904 MHz.
MIN. TYP. MAX. UNIT
â â 50 nA
60 120 250
â1â
pF
â 0.5 â
pF
â 0.4 â
pF
â9â
â 15 â
GHz
dB
â9â
dB
13 14 â
dB
â 1.1 1.6 dB
â 1.6 2.1 dB
â 1.9 â
dB
â 17 â
dBm
â 26 â
dBm
September 1995
4
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