BFR520_2015 Datasheet, PDF (5/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR520
handboo⁴k,⁰h⁰alfpage
Ptot
(mW)
300
MRA702 - 1
200
100
0
0
50
100
150
200
Ts (^o C)
Fig.2 Power derating curve.
250
handbook, halfpage
hFE
200
MRA703
150
100
50
010_−2
10^−1
1
10 _{IC (mA)} 10²
V_CE = 6 V.
Fig.3 DC current gain as a function of collector
current.
0.6
handbook, halfpage
Cre
(pF)
0.4
0.2
MRA704
handbook¹,²halfpage
fT
(GHz)
8
4
MRA705
VCE = 6V
VCE = 3V
0
0
4
8 _{VCB (V)} 12
i_C = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage.
September 1995
0
10^−1
1
T_amb = 25 °C; f = 1 GHz.
10 _{IC (mA)} 10²
Fig.5 Transition frequency as a function of
collector current.
5