BFR520_2015 Datasheet, PDF (3/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR520
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CES
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
R_BE = 0
open collector
up to T_s = 97 °C; note 1
THERMAL RESISTANCE
SYMBOL
PARAMETER
R_{th j-s}
from junction to soldering point (note 1)
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN. MAX. UNIT
−
20
V
−
15
V
−
2.5 V
−
70
mA
−
300 mW
−65 150 °C
−
175 °C
THERMAL RESISTANCE
260 K/W
September 1995
3