BFR520_2015 Datasheet, PDF (6/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR520
25
handb_go_aok_in, halfpage
(dB)
20
15
MSG
10
MRA706
GUM
Gmax
5
0
0
10
20 _{IC (mA)} 30
V_CE = 6 V; f = 900 MHz.
Fig.6 Gain as a function of collector current.
25
gain
(dB)
20
15
10
5
MRA707
Gmax
GUM
0
0
10
20 _{IC (mA)} 30
V_CE = 6 V; f = 2 GHz.
Fig.7 Gain as a function of collector current.
50
handbook, halfpage
gain
(dB)
40
30
20
10
GUM
MSG
MRA708
Gmax
0
10
10²
10³ _{f (MHz)} 10⁴
V_CE = 6 V; I_c = 5 mA.
Fig.8 Gain as a function of frequency.
50
handbook, halfpage
gain
(dB)
40
30
20
GUM
MSG
10
MRA709
Gmax
0
10
10²
10³ _{f (MHz)} 10⁴
V_CE = 6 V; I_c = 20 mA.
Fig.9 Gain as a function of frequency.
September 1995
6