BFG67_2015 Datasheet, PDF (7/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 8 GHz wideband transistors

Philips Semiconductors
NPN 8 GHz wideband transistors
Product specification
BFG67; BFG67/X; BFG67/XR
4
handbook, halfpage
F
(dB)
3
2
MBB309
I _C = 30 mA
15 mA
5 mA
1
0
10 ²
10 ³
10 ⁴
f (MHz)
V_CE = 8 V.
Fig.12 Minimum noise figure as a function of
frequency.
BFG67/X
f
(MHz)
500
V_CE
(V)
8
I_C
(mA)
5
Noise Parameters
F_min
(dB)
0.95
Gamma (opt)
(mag) (ang)
0.455 33.8
R_n/50
0.288
unstable
region
0.5
stability
1
circle
2
0.2
+j
0
−j
0.2
0.2
0.5
1
3 dB
1.5 dB
2 dB
Fmin=0.95 dB
5
OPT
10
2
5 10
∞
10
5
1998 Oct 02
Z_O = 50 Ω.
0.5
1
Fig.13 Noise circle figure.
2
MBB317
7