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BFG67_2015 Datasheet, PDF (4/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 8 GHz wideband transistors | |||
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Philips Semiconductors
NPN 8 GHz wideband transistors
Product speciï¬cation
BFG67; BFG67/X; BFG67/XR
CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
ICBO
hFE
fT
Cc
Ce
Cre
GUM
F
collector leakage current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power
gain; note 1
noise ï¬gure
VCB = 5 V; IE = 0
IC = 15 mA; VCE = 5 V
IC = 15 mA; VCE = 8 V; f = 500 MHz
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = ic = 0; VCB = 8 V; f = 1 MHz
IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
Îs = Îopt; IC = 5 mA; VCE = 8 V
Tamb = 25 °C; f = 1 GHz
Îs = Îopt; IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz; ZS = 60 â¦
IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz; ZS = 60 â¦
MIN.
â
60
â
â
â
â
â
TYP.
â
100
8
0.7
1.3
0.5
17
MAX.
50
â
â
â
â
â
â
UNIT
nA
GHz
pF
pF
pF
dB
â
10
â
dB
â
1.3
â
dB
â
1.7
â
dB
â
2.5
â
dB
â
3
â
dB
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM
=
10
log --(--1-----â------S----1---1----S2---)-2---1(---1-2----â------S----2--2-----2---)-
dB.
1998 Oct 02
4
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