BFG67_2015 Datasheet, PDF (3/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 8 GHz wideband transistors

Philips Semiconductors
NPN 8 GHz wideband transistors
Product specification
BFG67; BFG67/X; BFG67/XR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
CONDITIONS
open emitter
open base
open collector
T_s ≤ 65 °C; see Fig.3; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−65
−
MAX.
20
10
2.5
50
380
150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-s}
thermal resistance from junction to soldering point note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
VALUE
290
UNIT
K/W
handboo⁴k,⁰h⁰alfpage
Ptot
(mW)
300
MBC984 - 1
200
100
0
0
50
100
150
200
Ts (^o C)
Fig.3 Power derating curve.
1998 Oct 02
3