BFG67_2015 Datasheet, PDF (5/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 8 GHz wideband transistors

Philips Semiconductors
NPN 8 GHz wideband transistors
Product specification
BFG67; BFG67/X; BFG67/XR
handboo¹k,²h⁰alfpage
h _FE
80
MBB301
40
0
0
20
40
60
I _C (mA)
V_CE = 5 V.
Fig.4 DC current gain as a function of collector
current.
handbook⁰, ^.h⁸alfpage
Cre
(pF)
0.6
0.4
MBB302
0.2
0
0
4
8
12
16
VCB (V)
I_C = i_c = 0; f = 1 MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage.
10
handbook, halfpage
fT
(GHz)
8
MBB303
6
4
2
0
0
10
20
30
40
IC (mA)
V_CE = 8 V; T_amb = 25 °; f = 2 GHz.
Fig.6 Transition frequency as a function of
collector current.
1998 Oct 02
handbook,²h⁵alfpage
gain
(dB)
20
15
10
MSG
G _UM
MBB304
G _max
5
0
0
10
20
30 _{IC (mA)} 40
V_CE = 8 V; f = 1 GHz.
G_UM = maximum unilateral power gain;
MSG = maximum stable gain;
G_max = maximum available gain.
Fig.7 Gain as a function of collector current.
5