BFG67_2015 Datasheet, PDF (2/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 8 GHz wideband transistors

Philips Semiconductors
NPN 8 GHz wideband transistors
Product specification
BFG67; BFG67/X; BFG67/XR
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the GHz
range, such as satellite TV tuners and
portable RF communications
equipment.
PINNING
PIN
1
2
3
4
BFG67
collector
base
emitter
emitter
DESCRIPTION
BFG67/X
collector
emitter
base
emitter
BFG67/XR
collector
emitter
base
emitter
DESCRIPTION
NPN silicon transistor in a 4-pin,
dual-emitter SOT143B plastic
package. Available with in-line emitter
pinning (BFG67) and cross emitter
pinning (BFG67/X). Version with
reverse pinning (BFG67/XR) also
available on request.
handbook, 2 c4olumns
1
Top view
3
2
MSB014
MARKING
TYPE NUMBER
BFG67 (Fig.1)
BFG67/X (Fig.1)
BFG67/XR (Fig.2)
CODE
V3
V12
V26
Fig.1 Simplified outline
SOT143B.
handbook, 2 co3lumns
4
2
Top view
1
MSB035
Fig.2 Simplified outline
SOT143R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CEO
I_C
P_tot
C_re
f_T
G_UM
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power
gain
F
noise figure
CONDITIONS
open base
T_s ≤ 65 °C
I_C = i_c = 0; V_CB = 8 V; f = 1 MHz
I_C = 15 mA; V_CE = 8 V; f = 500 MHz
I_C = 15 mA; V_CE = 8 V;
T_amb = 25 °C; f = 1 GHz
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 8 V;
T_amb = 25 °C; f = 1 GHz
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 8 V;
T_amb = 25 °C; f = 2 GHz
TYP.
−
−
−
0.5
8
17
1.3
2.2
MAX.
10
50
300
−
−
−
UNIT
V
mA
mW
pF
GHz
dB
−
dB
−
dB
1998 Oct 02
2