T0160NB45A Datasheet, PDF (6/7 Pages) IXYS Corporation – Insulated Gate Bi-Polar Transistor

Figure 13 – Typical reverse recovery current
150
T0160NB45A
Issue 1
T_j=125°C
I_C=160A
I_C=100A
100
Insulated Gate Bi-polar Transistor Type T0160NB45A
Figure 14 – Typical reverse recovery time
7
T0160NB45A
Issue 1
T_j=125°C
6
5
4
50
3
I_C=160A
I_C=100A
2
0
0
100
200
300
400
Commutation rate - di/dt (A/µs)
1
0
100
200
300
400
Commutation rate - di/dt (A/µs)
Figure 15 – Transient thermal impedance (IGBT)
1
T0160NB45A
Issue 1
0.1
E m itte r
Collector
Double Side
0.01
0.001
0.0001
0.00001
Figure 16 – Transient thermal impedance (Diode)
10
T0160NB45A
Issue 1
Anode
1
Cathode
Double Side
0.1
0.01
0.001
0.0001
0.00001
0.000001
0.00001 0.0001 0.001 0.01
0.1
1
Time (s)
10
100
0.000001
1E-06 1E-05 0.0001 0.001 0.01 0.1
1
Time (s)
10 100
Data Sheet T0160NB45A Issue 1
Page 6 of 7
February, 2013