T0160NB45A Datasheet, PDF (4/7 Pages) IXYS Corporation – Insulated Gate Bi-Polar Transistor

Figure 5 – Typical turn-off delay time vs. gate
resistance
10
V_CE=2800V
V_GE=±15V
C_GE=22nF
T_j=125°C
T0160NB45A
Issue 1
8
160A
6
100A
4
2
Insulated Gate Bi-polar Transistor Type T0160NB45A
Figure 6 – Typical turn-on energy vs. collector current
2
R_G(on)=33Ω
C_GE=22nF
V_GE=±15V
T_j=125°C
T0160NB45A
Issue 1
V_CE=2800V
1
V_CE=2000V
V_CE=1000V
0
0
20
40
60
80 100 120 140 160
Gate resistance - R_G(off) (Ω)
0
0
50
100
150
200
Collector current - I_C (A)
Figure 7 – Typical turn-on energy vs. di/dt
5
V_CE=2800V
V_GE=±15V
T_j=125°C
T0160NB45A
Issue 1
4
3
2
I_C=160A
1
I_C=100A
Figure 8 – Typical turn-off energy vs. collector current
1.0
R_G(off)=38Ω
C_GE=22nF
V_GE=±15V
T_j=125°C
T0160NB45A
Issue 1
0.8
V_CE=2800V
0.6
V_CE=2000V
0.4
V_CE=1000V
0.2
0
0.0
0
100
200
300
400
0
Commutation rate - di/dt (A/µs)
50
100
150
200
Collector current - I_C (A)
Data Sheet T0160NB45A Issue 1
Page 4 of 7
February, 2013