T0160NB45A Datasheet, PDF (5/7 Pages) IXYS Corporation – Insulated Gate Bi-Polar Transistor

Figure 9 – Turn-off energy vs voltage
1
R_G(off)=38Ω
C_GE=22nF
V_GE=±15V
T_j=125°C
0.8
T0160NB45A
Issue 1
I_C=160A
0.6
I_C=100A
0.4
I_C=70A
0.2
I_C=50A
Insulated Gate Bi-polar Transistor Type T0160NB45A
Figure 10 – Safe operating area
400
V_GE=±15V
Maximum L_S=200nH
T_j=125°C
T0160NB45A
Issue 1
300
200
100
0
500
1000
1500
2000
2500
3000
Collector-emitter voltage - V_CE (V)
3500
0
0
1000
2000
3000
4000
5000
Gollector-emitter voltage - V_CE (V)
Figure 11 – Typical diode forward characteristics
1000
T0160NB45A
Issue 1
T_j=25°C
T_j=125°C
100
Figure 12 – Typical recovered charge
400
T0160NB45A
Issue 1
T_j=125°C
I_C=160A
300
I_C=100A
10
200
1
0
1
2
3
4
5
6
Instantaneous forward voltage - V_F (V)
100
0
100
200
300
400
Commutation rate - di/dt (A/µs)
Data Sheet T0160NB45A Issue 1
Page 5 of 7
February, 2013