T0160NB45A Datasheet, PDF (3/7 Pages) IXYS Corporation – Insulated Gate Bi-Polar Transistor

Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
1000
T0160NB45A
Issue 1
V_GE=+15V
25°C
125°C
Insulated Gate Bi-polar Transistor Type T0160NB45A
Figure 2 – Typical output characteristic
400
T0160NB45A
Issue 1
T_j =25°C
300
100
200
V_GE = 20V
V_GE = 17V
V_GE = 15V
10
V_GE = 13V
V_GE = 11V
100
1
0
1
2
3
4
5
6
7
Collector to emitter saturation voltage - V_CE(sat) (V)
Figure 3 – Typical output characteristic
400
T0160NB45A
Issue 1
T_j=125°C
0
0
1
2
3
4
5
Collector to emitter saturation voltage - V_CE(sat) (V)
Figure 4 – Typical turn-on delay time vs gate
resistance
15
V_CE=2800V
V_GE=±15V
C_GE=22nF
T_j=125°C
T0160NB45A
Issue 1
300
160A
10
100A
200
V_GE = 20V
V_GE = 17V
V_GE = 15V
V_GE = 13V
V_GE = 11V
5
100
0
0
1
2
3
4
5
6
7
Collector to emitter saturation voltage - V_CE(sat) (V)
0
20
40
60
80
100
120
140
Gate resistance - R_G(on) (Ω)
Data Sheet T0160NB45A Issue 1
Page 3 of 7
February, 2013