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| T0160NB45A Datasheet, PDF (2/7 Pages) IXYS Corporation – Insulated Gate Bi-Polar Transistor | |||
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Insulated Gate Bi-polar Transistor Type T0160NB45A
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector â emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector â emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC
Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.70
3.40
-
-
5.2
5
-
30
3.0
2.5
4
1.4
1.8
1.6
5
0.7
550
MAX
3.15
3.80
1.71
13.1
-
15
±4
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 160A, VGE = 15V, Tj = 25°C
IC = 160A, VGE = 15V
Current range: 53.3 â 160A
VCE = VGE, IC = 18mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =160A, VCE =2800V, di/dt=300A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 33â¦, Rg(OFF)=38â¦, CGE=22nF
Integral diode used as freewheel diode
(Note 3 & 4)
VGE=+15V, VCC=2800V, VCEmaxâ¤VCES,
tpâ¤10µs
UNITS
V
V
V
mâ¦
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Diode Characteristics
PARAMETER
VF
Forward voltage
VTo
Threshold voltage
rT
Slope resistance
Irm
Peak reverse recovery current
Qrr
Recovered charge
trr
Reverse recovery time, 50% chord
Er
Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
3.25
3.40
-
-
120
300
2.7
0.24
MAX
3.60
3.75
2.04
10.7
-
-
-
-
TEST CONDITIONS
IF = 160A, Tj =25°C
IF = 160A
Current range 53.3 - 160A
IF = 160A, VGE = -15V, di/dt=300A/µs
UNITS
V
V
V
mâ¦
A
µC
µs
J
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
R
thJK
Thermal resistance junction to sink, Diode
F
Mounting force
Wt
Weight
MIN
-
-
-
-
-
-
8
-
TYP
-
-
-
-
-
-
-
0.5
MAX
72
118
186
172
268
478
12
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate â emitter capacitance added to output of gate drive
4) Figures 6 to 9 are obtained using integral diode as freewheeling diode
Data Sheet T0160NB45A Issue 1
Page 2 of 7
February, 2013
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