IS61LV256AL_09 Datasheet, PDF (9/12 Pages) Integrated Silicon Solution, Inc – 32K x 8 LOW VOLTAGE CMOS STATIC RAM

IS61LV256AL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter
Test Condition
Vdr Vdd for Data Retention
See Data Retention Waveform
Idr Data Retention Current

Vdd = 2.0V, CE ≥ Vdd – 0.2V
Vin ≥ Vdd – 0.2V, or Vin ≤ Vss + 0.2V
Com.
Ind.
tsdr Data Retention Setup Time See Data Retention Waveform
trdr Recovery Time
See Data Retention Waveform
Note:
1. Typical Values are measured at Vdd = 3.3V, Ta = 25^oC and not 100% tested.
Min. Typ.⁽¹⁾
2.0
—
2
——
0
trc
Max. Unit
3.6 V
40 µA
50
— ns
— ns
DATA RETENTION WAVEFORM (CE Controlled)
VDD
t_SDR
Data Retention Mode
t_RDR
V_DR
CE
GND
CE ≥ VDD - 0.2V
Integrated Silicon Solution, Inc. — 1-800-379-4774
9
Rev.  C
07/29/09