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IS62WV20488ALL Datasheet, PDF (8/16 Pages) Integrated Silicon Solution, Inc – 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM | |||
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IS62WV20488ALL
IS62WV20488BLL
ISSI ®
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol
Parameter
25ns
35ns
Min. Max.
Min. Max.
Unit
tRC
Read Cycle Time
25
â
35
â
ns
tAA
Address Access Time
â
25
â
35
ns
tOHA
Output Hold Time
4
â
4
â
ns
tACS1/tACS2
CS1/CS2 Access Time
â
25
â
35
ns
tDOE
OE Access Time
â
12
â
15
ns
tHZOE(2)
OE to High-Z Output
â
8
â
10
ns
tLZOE(2)
OE to Low-Z Output
5
â
5
â
ns
t t HZCS1/ HZCS2(2) CS1/CS2 to High-Z Output
0
8
0
10
ns
t t LZCS1/ LZCS2(2) CS1/CS2 to Low-Z Output
10
â
10
â
ns
Notes:
1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof0.9V/1.5V,inputpulselevelsof0.4toVDD-0.2V/0.4VtoVDD-0.3Vand
output loading specified in Figure 1.
2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (CS1 = OE = VIL, CS2 = WE = VIH)
ADDRESS
DOUT
tRC
tAA
tOHA
PREVIOUS DATA VALID
tOHA
DATA VALID
8
Integrated Silicon Solution, Inc. â www.issi.com â 1-800-379-4774
Rev. 00B
06/21/06
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