IS62WV20488ALL Datasheet, PDF (6/16 Pages) Integrated Silicon Solution, Inc – 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

IS62WV20488ALL
IS62WV20488BLL
ISSI ^®
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
-25
-35
Min. Max.
Min. Max.
Unit
ICC
VDD Dynamic Operating VDD = Max.,
Com. — 30
— 25
mA
Supply Current
IOUT = 0 mA, f = fMAX
Ind. — 35
— 30
typ.⁽²⁾
15
ICC1
Operating
VDD = Max.,
Com. — 10
— 10
mA
Supply Current
IOUT = 0 mA, f = 0
Ind. — 15
— 15
ISB1
TTL Standby Current VDD = Max.,
Com. — 10
— 10
mA
(TTL Inputs)
VIN = VIH or VIL
Ind. — 12
— 12
CS1 ≥ VIH, f = 0, CS2 = VIL
ISB2
CMOS Standby
VDD = Max.,
Com. — 1.5
— 1.5
mA
Current (CMOS Inputs) CS1 ≥ VDD – 0.2V,
Ind. — 1.5
— 1.5
CS2 ≤ 0.2V,
typ.⁽²⁾
0.8
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.0V, TA = 25^oC and not 100% tested.
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00B
06/21/06