IS62WV20488ALL Datasheet, PDF (12/16 Pages) Integrated Silicon Solution, Inc – 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

IS62WV20488ALL
IS62WV20488BLL
ISSI ^®
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter
Test Condition
VDR
Vcc for Data Retention
See Data Retention Waveform
IDR
Data Retention Current
Vcc = 1.2V, CS1/CS2 ≥ Vcc – 0.2V
tSDR
Data Retention Setup Time See Data Retention Waveform
tRDR
Recovery Time
See Data Retention Waveform
Note:
1. Typical values are measured at VDD = 3.0V, TA = 25oC and not 100% tested.
Min.
1.2
—
0
tRC
Typ.⁽¹⁾ Max. Unit
3.6 V
0.5 1.5 mA
— ns
— ns
DATA RETENTION WAVEFORM (CS1 Controlled)
V_CC
3.0V
t_SDR
Data Retention Mode
t_RDR
2.2V
V_DR
CS1
GND
CS1 ≥ V_{CC -} 0.2V
DATA RETENTION WAVEFORM (CS2 Controlled)
V_CC
3.0
CS2
2.2V
V_DR
0.4V
GND
Data Retention Mode
t_SDR
CS2 ≤ 0.2V
t_RDR
12
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00B
06/21/06