IS62WV20488ALL Datasheet, PDF (5/16 Pages) Integrated Silicon Solution, Inc – 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM

IS62WV20488ALL
IS62WV20488BLL
ISSI ^®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 2.4V-3.6V
Symbol Parameter
Test Conditions
VOH
Output HIGH Voltage
VDD = Min., IOH = –1.0 mA
VOL
Output LOW Voltage
VDD = Min., IOL = 1.0 mA
VIH
Input HIGH Voltage
VIL
Input LOW Voltage⁽¹⁾
ILI
Input Leakage
GND ≤ VIN ≤ VDD
ILO
Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
Min.
Max.
Unit
1.8
—
V
—
0.4
V
2.0 VDD + 0.3
V
–0.3
0.8
V
–1
1
µA
–1
1
µA
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 1.65V-2.2V
Symbol Parameter
Test Conditions
VDD
VOH
Output HIGH Voltage
IOH = -0.1 mA
1.65-2.2V
VOL
Output LOW Voltage
IOL = 0.1 mA
1.65-2.2V
VIH
Input HIGH Voltage
1.65-2.2V
VIL(1)
Input LOW Voltage
1.65-2.2V
ILI
Input Leakage
GND ≤ VIN ≤ VDD
ILO
Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
Min.
1.4
—
1.4
–0.2
–1
–1
Max.
—
0.2
VDD + 0.2
0.4
1
1
Unit
V
V
V
V
µA
µA
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
Rev. 00B
06/21/06