IS62WV51216ALL Datasheet, PDF (7/16 Pages) Integrated Silicon Solution, Inc – 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62WV51216ALL, IS62WV51216BLL
ISSI ^®
IS62WV51216BLL, POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
ICC
VDDDynamicOperating VDD=Max.,
Com.
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
ICC1
Operating Supply
Current
VDD = Max., CS1 = 0.2V
WE = VDD – 0.2V
Com.
Ind.
CS2 = VDD – 0.2V, f = 1MHZ
ISB1
TTL Standby Current
VDD = Max.,
Com.
(TTL Inputs)
VIN = VIH or VIL
Ind.
CS1 = VIH , CS2 = VIL,
f = 1 MHZ
Max. Max. Max. Unit
45
55
70
35
30
25
mA
40
35
30
5
5
5
mA
5
5
5
0.3 0.3 0.3 mA
0.3 0.3 0.3
OR
ULB Control
VDD = Max., VIN = VIH or VIL
CS1 = VIL, f = 0, UB = VIH, LB = VIH
ISB2
CMOS Standby
VDD = Max.,
Com.
Current(CMOSInputs) CS1 ≥ VDD – 0.2V,
Ind.
CS2 ≤ 0.2V,
typ. ⁽²⁾
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
20
20
20
µA
25
25
25
4
4
4
OR
ULB Control
VDD = Max., CS1 = VIL, CS2=VIH
VIN ≥ VDD – 0.2V, or VIN ≤ 0.2V, f = 0;
UB / LB = VDD – 0.2V
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.0V, TA = 25^oC and not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
7
Rev. B
02/24/05