IS62WV51216ALL Datasheet, PDF (6/16 Pages) Integrated Silicon Solution, Inc – 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62WV51216ALL, IS62WV51216BLL
ISSI ^®
IS62WV51216ALL, POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
ICC
VDDDynamicOperating VDD=Max.,
Com.
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
ICC1
Operating Supply
Current
VDD = Max., CS1 = 0.2V
WE = VDD – 0.2V
Com.
Ind.
CS2 = VDD – 0.2V, f = 1MHZ
ISB1
TTL Standby Current
VDD = Max.,
Com.
(TTL Inputs)
VIN = VIH or VIL
Ind.
CS1 = VIH , CS2 = VIL,
f = 1 MHZ
OR
ULB Control
VDD = Max., VIN = VIH or VIL
CS1 = VIL, f = 0, UB = VIH, LB = VIH
ISB2
CMOS Standby
VDD = Max.,
Current(CMOSInputs) CS1 ≥ VDD – 0.2V,
CS2 ≤ 0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
typ.⁽¹⁾
OR
ULB Control
VDD = Max., CS1 = VIL, CS2=VIH
VIN ≥ VDD – 0.2V, or VIN ≤ 0.2V, f = 0;
UB / LB = VDD – 0.2V
Note:.
1. Typical values are measured at VDD = 1.8V, TA = 25^oC and not 100% tested.
Max. Unit
70
20 mA
25
4
mA
4
0.3 mA
0.3
15
µA
21
3
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
02/24/05