IS62WV51216ALL Datasheet, PDF (4/16 Pages) Integrated Silicon Solution, Inc – 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62WV51216ALL, IS62WV51216BLL
ISSI ^®
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
Parameter
Value
Unit
VTERM
Terminal Voltage with Respect to GND
–0.2 to VDD+0.3
V
TBIAS
Temperature Under Bias
–40 to +85
°C
VDD
VDD Related to GND
–0.2 to +3.8
V
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
VDD
Min.
Max.
Unit
VOH
Output HIGH Voltage
IOH = -0.1 mA
1.65-2.2V
1.4
—
V
IOH = -1 mA
2.5-3.6V
2.2
—
V
VOL
Output LOW Voltage
IOL = 0.1 mA
IOL = 2.1 mA
1.65-2.2V
—
0.2
V
2.5-3.6V
—
0.4
V
VIH
Input HIGH Voltage
1.65-2.2V
2.5-3.6V
1.4
VDD + 0.2
V
2.2
VDD + 0.3
V
VIL(1)
Input LOW Voltage
1.65-2.2V
–0.2
0.4
V
2.5-3.6V
–0.2
0.6
V
ILI
Input Leakage
GND ≤ VIN ≤ VDD
–1
1
µA
ILO
Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
–1
1
µA
Notes:
1. VIL (min.) = –1.0V for pulse width less than 10 ns.
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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
02/24/05