IS62C10248AL Datasheet, PDF (7/14 Pages) Integrated Silicon Solution, Inc – 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62C10248AL, IS65C10248AL
READ CYCLE SWITCHING CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol
Parameter
45 ns
55 ns
Min. Max.
Min.
Max.
Unit
trc
Read Cycle Time
45
—
55
—
ns
taa
Address Access Time
—
45
—
55
ns
toha
Output Hold Time
10
—
10
—
ns
tacs1/tacs2
CS1/CS2 Access Time
—
45
—
55
ns
tdoe
OE Access Time
—
20
—
25
ns
thzoe⁽²⁾
OE to High-Z Output
—
15
—
20
ns
tlzoe⁽²⁾
OE to Low-Z Output
5
—
5
—
ns
t t hzcs1/ hzcs2⁽²⁾ CS1/CS2 to High-Z Output
0
15
0
20
ns
t t lzcs1/ lzcs2⁽²⁾ CS1/CS2 to Low-Z Output
10
—
10
—
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC WAVEFORMS
READ CYCLE NO. 1^(1,2) (Address Controlled) (CS1 = OE = Vil, CS2 = WE = Vih)
ADDRESS
DOUT
tRC
tAA
tOHA
PREVIOUS DATA VALID
tOHA
DATA VALID
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
7
Rev.  00A
09/25/09