IS62C10248AL Datasheet, PDF (11/14 Pages) Integrated Silicon Solution, Inc – 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62C10248AL, IS65C10248AL
DATA RETENTION SWITCHING CHARACTERISTICS (4.5V - 5.5V) 
Symbol Parameter
Test Condition Min. Typ.⁽¹⁾ Max. Unit
Vdr
Vdd for Data Retention
See Data Retention Waveform
2.0
5.5
V
Idr
Data Retention Current



Vdd = 2.0V and
CS1 ≥ Vdd – 0.2V and
(a) CS2 ≥ Vdd – 0.2V or
(b) CS2 ≤ GND + 0.2V
—
20
µA
Com.
—
15
40
Ind.
—
—
60
Auto.
—
—
180
tsdr
Data Retention Setup Time See Data Retention Waveform
0
—
ns
trdr
Recovery Time
See Data Retention Waveform
trc
—
ns
Note:
1.Typical Values are measured at Vcc = 5V, Ta = 25^oC and not 100% tested.
DATA RETENTION WAVEFORM (CS1 Controlled)
VDD
1.65V
1.4V
VDR
CS1
GND
tSDR
Data Retention Mode
tRDR
CS1 ≥ VDD - 0.2V
DATA RETENTION WAVEFORM (CS2 Controlled)
Data Retention Mode
V_DD
3.0
CE2
2.2V
V_DR
0.4V
GND
t_SDR
CS2 ≤ 0.2V
t_RDR
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
11
Rev.  00A
09/25/09