IS62C10248AL Datasheet, PDF (6/14 Pages) Integrated Silicon Solution, Inc – 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62C10248AL, IS65C10248AL
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
-45 ns
-55 ns
Symbol Parameter
Test Conditions
Icc
Vdd Dynamic Operating Vdd = Max., CS1 = Vil, CS2 = Vih
Min. Max. Min. Max. Unit
Com. — 25
mA
Supply Current
Iout = 0 mA
Ind.
— 25
Vin = Vih or Vil
Auto.
— 40
f = fmax
typ⁽²⁾
13
12
Icc1
Average operating
CS1 = Vil, CS2 = Vih
Com. — 10
mA
Current
I I/O = 0 mA
Ind.
— 10
Vin = Vih or Vil
Isb1
TTL Standby Current Vdd = Max., CS1 ≥ Vih, CS2 ≤ Vil
Auto.
— 20
Com. — 1
mA
(TTL Inputs)
Vin = Vih or Vil
Ind.
— 1.5
f=0
Auto.
—2
Isb2
CMOS Standby
Vdd = Max.,
Com. — 40
µA
Current (CMOS Inputs) CS1≥ Vdd – 0.2V and CS2 ≤ Vss + 0.2V Ind.
— 60
Vin ≥ Vdd – 0.2V or Vin ≤ Vss + 0.2V
Auto.
— 180
f=0
typ⁽²⁾
15
Note:
1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2.Typical Values are measured at Vcc = 5V, Ta = 25^oC and not 100% tested.
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev.  00A
09/25/09