IS62C10248AL Datasheet, PDF (1/14 Pages) Integrated Silicon Solution, Inc – 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62C10248AL
IS65C10248AL
1M x 8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
PRELIMINARY INFORMATION
OCTOBER 2009
FEATURES
DESCRIPTION
• High-speed access time: 45ns, 55ns
• CMOS low power operation
– 36 mW (typical) operating
– 12 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
– 4.5V--5.5V Vdd
• Three state outputs
• Automotive temperature (-40^oC to +125^oC)
The ISSI IS62C10248AL/IS65C10248AL are high-
speed, 8M bit static RAMs organized as 1M words by
8 bits. It is fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields high-
performance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is low
(deselected), the device assumes a standby mode at
which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory.
• Lead-free available
The IS62C10248AL and IS65C10248AL are packaged in
the JEDEC standard 48-pin mini BGA (9mm x 11mm) and
44-Pin TSOP (TYPE II).
FUNCTIONAL BLOCK DIAGRAM
A0-A19
VDD
GND
I/O0-I/O7
DECODER
I/O
DATA
CIRCUIT
1M x 8
MEMORY ARRAY
COLUMN I/O
CS2
CS1
CONTROL
OE
CIRCUIT
WE
Copyright © 2009 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
Rev.  00A
09/25/09