IS64LV25616AL Datasheet, PDF (5/14 Pages) Integrated Silicon Solution, Inc – 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS64LV25616AL
ISSI ^®
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
-10
-12
1
Symbol Parameter
Test Conditions
Options
Min. Max. Min. Max. Unit
ICC
VDD Dynamic Operating VDD = Max.,
A1
— 100 — — mA
Supply Current
IOUT = 0 mA, f = fMAX
A2
——
— 110
2
A3
——
— 120
ISB
TTL Standby Current VDD = Max.,
A1
— 50
——
mA
(TTL Inputs)
VIN = VIH or VIL
CE ≥ VIH, f = fMAX.
A2
——
— 55
A3
——
— 60
3
ISB1
TTL Standby Current VDD = Max.,
A1
— 20
——
mA
(TTL Inputs)
VIN = VIH or VIL
A2
——
— 30
CE ≥ VIH, f = 0
A3
——
— 40
4
ISB2
CMOS Standby
VDD = Max.,
A1
— 15
——
mA
Current (CMOS Inputs) CE ≥ VDD – 0.2V,
A2
——
— 25
VIN ≥ VDD – 0.2V, or
A3
——
— 35
VIN ≤ 0.2V, f = 0
typ⁽²⁾
—5
—5
5
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. Shaded area product
in development
2. Typical values are measured at VDD = 3.3V, TA = 25^oC and not 100% tested.
6
CAPACITANCE⁽¹⁾
Symbol Parameter
Conditions
Max.
Unit
7
CIN
Input Capacitance
VIN = 0V
6
pF
COUT
Input/Output Capacitance
VOUT = 0V
8
pF
Note:
8
1. Tested initially and after any design or process changes that may affect these parameters.
9
10
11
12
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
Rev. D
07/05/06