IS64LV25616AL Datasheet, PDF (4/14 Pages) Integrated Silicon Solution, Inc – 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS64LV25616AL
ISSI ^®
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
VTERM
Terminal Voltage with Respect to GND
–0.5 to VDD+0.5
V
VDD
VDD Related to GND
–0.3 to +4.0
V
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
OPERATING RANGE
Options
A1
A2
A3
Ambient Temperature
–40°C to +85°C
–40°C to +105°C
–40°C to +125°C
VDD
3.3V +10%, -5%
3.3V +10%, -5%
3.3V +10%, -5%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
VOH
VOL
VIH
VIL
ILI
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage⁽¹⁾
Input Leakage
ILO
Output Leakage
Test Conditions
VDD = Min., IOH = –4.0 mA
VDD = Min., IOL = 8.0 mA
GND ≤ VIN ≤ VDD
GND ≤ VOUT ≤ VDD,
Outputs Disabled
Options Min.
Max.
Unit
2.4
—
V
—
0.4
V
2.0 VDD + 0.3
V
-0.3
0.8
V
A1
-2
2
µA
A2
-5
5
A3
-10
10
A1
-2
2
µA
A2
-5
5
A3
-10
10
Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
07/05/06