IS62LV1288LL Datasheet, PDF (4/10 Pages) Integrated Silicon Solution, Inc – 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

IS62LV1288LL
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage⁽¹⁾
ILI
Input Leakage
ILO
Output Leakage
Notes:
1. VIL = –3.0V for pulse width less than 10 ns.
Test Conditions
VCC = Min., IOH = –1.0 mA
VCC = Min., IOL = 2.1 mA
GND ≤ VIN ≤ VCC
GND ≤ VOUT ≤ VCC
ISSI ^®
Min.
2.2
—
2.0
–0.2
–1
–1
Max.
—
0.4
VCC + 0.2
0.4
1
1
Unit
V
V
V
V
µA
µA
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
-45
-55
-70
Min. Max.
Min. Max.
Min. Max.
Unit
ICC
Vcc Dynamic Operating VCC = Max., CE = VIL Com.
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
— 35
— 30
— 25
mA
— 40
— 35
— 30
ISB1 TTL Standby Current VCC = Max.,
Com.
(TTL Inputs)
VIN = VIH or VIL, CE1 ≥ VIH Ind.
or CE2 ≤ VIL, f = 0
— 0.4
—1
— 0.4
—1
— 0.4
mA
—1
ISB2 CMOS Standby
VCC = Max., f = 0
Com.
Current (CMOS Inputs) CE1 ≥ VCC – 0.2V,
Ind.
CE2 ≤ 0.2V,
or VIN ≥ VCC – 0.2V, VIN ≤ 0.2V
—8
—8
—8
µA
— 10
— 10
— 10
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/22/01