IS62LV1288LL Datasheet, PDF (1/10 Pages) Integrated Silicon Solution, Inc – 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

IS62LV1288LL
128K x 8 LOW POWER and LOW Vcc
CMOS STATIC RAM
ISSI^®
FEBUARY 2001
FEATURES
• Access times of 45, 55, and 70 ns
• Low active power: 60 mW (typical)
• Low standby power: 15 µW (typical) CMOS
standby
• Low data retention voltage: 2V (min.)
• Ultra Low Power
• Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
• TTL compatible inputs and outputs
• Single 2.5V (min.) to 3.45V (max.) power supply
• Industrial temperature available
• Available in 32-pin TSOP (Type I), 32-pin
STSOP, and 450-mil SOP
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS62LV1288LL is a low power and low
Vcc,131,072-word by 8-bit CMOS static RAM. It is
fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields higher
performance and low power consumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the
device assumes a standby mode at which the power
dissipation can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip
Enable inputs, CE1 and CE2. The active LOW Write Enable
(WE) controls both writing and reading of the memory.
The IS62LV1288LL is available in 32-pin TSOP (Type I),
STSOP (8 x 13.4mm), and 450-mil plastic SOP (525-mil
pin to pin) packages.
A0-A16
VCC
GND
I/O0-I/O7
DECODER
I/O
DATA
CIRCUIT
512 X 2048
MEMORY ARRAY
COLUMN I/O
CE1
CE2
CONTROL
OE
CIRCUIT
WE
This document contISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no
responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. A
03/22/01