IS62LV1288LL Datasheet, PDF (3/10 Pages) Integrated Silicon Solution, Inc – 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

IS62LV1288LL
TRUTH TABLE
Mode
WE CE1 CE2 OE
Not Selected X
H
XX
(Power-down) X
X
LX
Output Disabled H
L
HH
Read
H
L
HL
Write
L
L
HX
I/O Operation
High-Z
High-Z
High-Z
DOUT
DIN
Vcc Current
ISB1, ISB2
ISB1, ISB2
ICC
ICC
ICC
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
VTERM
VCC
TBIAS
TSTG
PT
Parameter
Terminal Voltage with Respect to GND
Vcc related to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
Value
Unit
–0.5 to Vcc + 0.5 V
–0.3 to +3.6
V
–40 to +85
°C
–65 to +150
°C
0.7
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
ISSI ^®
CAPACITANCE^(1,2)
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
6
8
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.0V.
Unit
pF
pF
Integrated Silicon Solution, Inc. — 1-800-379-4774
3
Rev. A
03/22/01