IS61WV25616EDBLL-10TLI-TR Datasheet, PDF (4/14 Pages) Integrated Silicon Solution, Inc – 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

IS61/64WV25616EDBLL
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
Vterm Terminal Voltage with Respect to GND –0.5 to Vdd + 0.5 V
Vdd
Vdd Relates to GND
–0.3 to 4.0
V
Tstg
Storage Temperature
–65 to +150
°C
Pt
Power Dissipation
1.0
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE^(1,2)
Symbol Parameter
Conditions
Max.
Cin
Input Capacitance
Vin = 0V
6
C_I/O
Input/Output Capacitance
Vout = 0V
8
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: Ta = 25°C, f = 1 MHz, Vdd = 3.3V.
Unit
pF
pF
ERROR DETECTION AND ERROR CORRECTION
• Independent ECC for each byte
• Detect and correct one bit error per byte
• Better reliability than parity code schemes which can only detect an error but not correct an error
• Backward Compatible: Drop in replacement to current in industry standard devices (without ECC)
OPERATING RANGE (Vdd)¹
Range
Ambient Temperature

Industrial
–40°C to +85°C
Automotive (A1) –40°C to +85°C
Automotive (A3) –40°C to +125°C
Note:
1.Contact [e-mail] for 1.8V option
IS61WV25616EDBLL
Vdd (8, 10ns)
2.4V-3.6V (10ns)
3.3V ± 10% (8ns)
—
—
IS64WV25616EDBLL
Vdd (10ns)
—
2.4V-3.6V
2.4V-3.6V
4
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/2011