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IS61QDB22M36 Datasheet, PDF (15/27 Pages) Integrated Silicon Solution, Inc – 72 Mb (2M x 36 & 4M x 18) QUAD (Burst of 2) Synchronous SRAMs
72 Mb (2M x 36 & 4M x 18)
QUAD (Burst of 2) Synchronous SRAMs
AC Characteristics (TA = 0 to + 70C, VDD = 1.8V -5%, +5%)
Parameter
Symbol
33
(300MHz)
Min
Max
Units
Notes
Clock
Cycle time (K, K, C, C)
tKHKH
3.3
7.5
ns
Clock phase jitter (K, K, C, C)
tKC-VAR
0.2
ns
Clock high pulse (K, K, C, C)
tKHKL
1.32
ns
Clock low pulse (K, K, C, C)
tKLKH
1.32
ns
Clock to clock (KH>KH, CH>CH)
tKHKH
1.49
ns
Clock to data clock (KH>CH, KH>CH) tKHCH
0.0
0.8
ns
DLL lock (K, C)
tKC-lock 1024
cycle
Doff Low period to DLL reset
5
ns
Output Times
C, C high to output valid
C, C high to output hold
C, C high to echo clock valid
C, C high to echo clock hold
CQ, CQ high to output valid
CQ, CQ high to output hold
C high to output high-Z
C high to output low-Z
Setup Times
tCHQV
0.45
ns
1, 3
tCHQX
-0.45
ns
1, 3
tCHCQV
0.40
ns
3
tCHCQX -0.40
ns
3
tCQHQV
0.27
ns
1, 3
tCQHQX -0.27
ns
1, 3
tCHQZ
0.45
ns
1, 3
tCHQX1 -0.45
ns
1, 3
Address valid to K, K rising edge
tAVKH
0.35
—
ns
2
Control inputs valid to K rising edge tIVKH
0.35
—
ns
2
Data-in valid to K, K rising edge
tDVKH
0.35
—
ns
2
Hold Times
K rising edge to address hold
tKHAX
0.35
—
ns
2
K rising edge to control inputs hold
tKHIX
0.35
—
ns
2
K, K rising edge to data-in hold
tKHDX
0.35
—
ns
2
1. See AC Test Loading on page 14
2. During normal operation, VIH, VIL, TRISE, and TFALL of inputs must be within 20% of VIH, VIL, TRISE, and TFALL of clock.
3. If C, C are tied high, then K, K become the references for C, C timing parameters.
Integrated Silicon Solution, Inc. — 1-800-379-4774
15
Rev. A
05/14/09