IRF8252PBF Datasheet, PDF (7/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF8252PbF
+
‚
-

R_G
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W.
Period
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
-
• Low Leakage Inductance
Current Transformer
-^„ +
D.U.T. I_SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform _{Diode Recovery}
dv/dt
• dv/dt controlled by R_G
• Driver same type as D.U.T.
V_DD
+
• I_SD controlled by Duty Factor "D"
-
• D.U.T. - Device Under Test
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
* V_GS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET^® Power MOSFETs
* V_GS=10V
V_DD
I_SD
V_DS
V_GS
R_G
V_GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R_D
D.U.T.
+_{- V D D}
Fig 18a. Switching Time Test Circuit
V_DS
90%
10%
V_GS
t_d(on) t_r
t_d(off) t_f
Fig 18b. Switching Time Waveforms
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