IRF8252PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
Benefits
l Very Low Gate Charge
l Very Low R_DS(on) at 4.5V V_GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V V_GS Max. Gate Rating
l 100% tested for Rg
l RoHS Compliant (Halogen Free)
l Low Thermal Resistance
PD - 96158
IRF8252PbF
HEXFET^® Power MOSFET
V_DSS R_DS(on) max
Qg
: 25V 2.7m @V_GS = 10V 35nC
S
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
Top View
SO-8
Description
The IRF8252PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8252PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Power Dissipation
Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
25
±20
25
20
200
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
R_θJL
R_θJA
g ^Parameter
Junction-to-Drain Lead
fg Junction-to-Ambient
Notes  through … are on page 9
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
07/07/08