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| IRF8252PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF8252PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
25
âââ
âââ
âââ
1.35
âââ
âââ
âââ
âââ
âââ
âââ
0.018
2.0
2.9
1.80
-6.67
âââ
âââ
âââ
âââ
âââ
âââ
2.7
3.7
2.35
âââ
1.0
150
100
-100
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
ee mâ¦
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 20A
V VDS = VGS, ID = 100µA
mV/°C VDS = VGS, ID = 100µA
µA VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
89 âââ âââ
âââ 35 53
S VDS = 13V, ID = 20A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 10 âââ
VDS = 13V
âââ 4.6 âââ nC VGS = 4.5V
âââ 12 âââ
ID = 20A
âââ 8.9 âââ
See Figs. 15 & 16
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 16 âââ
Qoss
Output Charge
Rg
Gate Resistance
âââ 26 âââ
âââ 0.61 1.22
nC VDS = 16V, VGS = 0V
â¦
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
âââ 23 âââ
VDD = 13V, VGS = 4.5V
âââ 32 âââ ns ID = 20A
âââ 19 âââ
RG = 1.8â¦
âââ 12 âââ
See Fig. 18
Ciss
Input Capacitance
âââ 5305 âââ
VGS = 0V
Coss
Output Capacitance
âââ 1340 âââ pF VDS = 13V
Crss
Reverse Transfer Capacitance
âââ 725 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
231
20
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ
3.1
âââ âââ
200
âââ âââ 1.0
âââ 19 29
âââ 12 18
MOSFET symbol
D
A
showing the
integral reverse
G
A
e p-n junction diode.
S
V TJ = 25°C, IS = 20A, VGS = 0V
e ns TJ = 25°C, IF = 20A, VDD = 13V
nC di/dt = 230A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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