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IRF8252PBF Datasheet, PDF (6/9 Pages) International Rectifier – HEXFET Power MOSFET
IRF8252PbF
7
ID = 20A
6
5
4
TJ = 125°C
3
2
TJ = 25°C
1
2
4
6
8
10
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
1000
900
800
700
ID
TOP 2.45A
8.0A
BOTTOM 20A
600
500
400
300
200
100
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V(BR)DSS
15V
tp
VDS
L
DRIVER
0
RG
20V
tp
D.U.T
IAS
0.01Ω
+
- VDD
A
I AS
Fig 14. Unclamped Inductive Test Circuit
and Waveform
Id
Vgs
L
DUT
210KK
S
VCC
Fig 15. Gate Charge Test Circuit
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 16. Gate Charge Waveform
6
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