IRF8252PBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF8252PbF
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
14.0
ID= 20A
12.0
10.0
8.0
6.0
4.0
VDS= 20V
VDS= 13V
2.0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
0.0
0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
TJ = 25°C
10
1.0
0.2
VGS = 0V
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
1msec
10
10msec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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