IRF6655 Datasheet, PDF (7/10 Pages) International Rectifier – DirectFET Power MOSFET Typical values (unless otherwise specified)

IRF6655
D.U.T
+
‚
-

R_G
+
ƒ
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
„
-
+
• di/dt controlled by R_G
• Driver same type as D.U.T.
• I_SD controlled by Duty Factor "D"
V_DD
+
-
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
V_GS=10V^*
D.U.T. I_SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform _{Diode Recovery}
dv/dt
Re-Applied
Voltage
Body Diode
Inducto^Inr^duC^ctou^rr^Ce^un^rrt^ent
Forward Drop
V_DD
Ripple ≤ 5%
I_SD
* V_GS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET^® Power MOSFETs
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