IRF6655 Datasheet, PDF (5/10 Pages) International Rectifier – DirectFET Power MOSFET Typical values (unless otherwise specified)

IRF6655
100
10
TJ = -40°C
TJ = 25°C
TJ = 150°C
VGS = 0V
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
5
4
3
2
1
0
25
50
75
100 125 150
TA , Ambient Temperature (°C)
Fig 12. Maximum Drain Current vs. Ambient Temperature
50
40
30
1000
100
Tc = 25°C
Tj = 175°C
Single Pulse
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100µsec
1
100msec
1msec
10msec
0.1
0.01
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
5.5
5
4.5
4
3.5
ID = 25µA
3
ID = 250µA
ID = 1.0mA
2.5
ID = 1.0A
2
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13. Threshold Voltage vs. Temperature
ID
TOP 0.86A
1.3A
BOTTOM 5.0A
20
10
0
25
50
75
100
125
150
Starting T _J , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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