IRF6655 Datasheet, PDF (1/10 Pages) International Rectifier – DirectFET Power MOSFET Typical values (unless otherwise specified)

PD - 96926D
l RoHS compliant containing no lead or bromide 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Ideal for Control FET sockets in 36V – 75V in
Synchronous Buck applications
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques 
IRF6655
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
100V max ±20V max 53mΩ@ 10V
Q_{g tot}
Q_gd
V_gs(th)
8.7nC 2.8nC
3.9V
SH
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
SH
MQ
MX
MT
MN
Description
The IRF6655 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the
lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF6655 is optimized for low power primary side bridge topologies in isolated DC-DC applications, and for high side control FET sockets in
non-isolated synchronous buck DC-DC applications for use in wide range universal Telecom systems (36V – 75V), and for secondary side
synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal perfor-
mance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high
performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
Max.
Units
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Drain-to-Source Voltage
Gate-to-Source Voltage
h Continuous Drain Current, V_GS @ 10V
h Continuous Drain Current, V_GS @ 10V
k Continuous Drain Current, V_GS @ 10V
e Pulsed Drain Current
f Single Pulse Avalanche Energy
Ãe Avalanche Current
100
V
±20
4.2
3.4
A
19
34
11
mJ
5.0
A
200
180
ID = 5.0A
160
140
120
100
TJ = 125°C
80
60
40
20
TJ = 25°C
0
4
6
8 10 12 14 16 18
12.0
10.0
ID= 5.0A
VDS= 80V
VDS= 50V
8.0
VDS= 20V
6.0
4.0
2.0
0.0
0
2
4
6
8
10
VGS, Gate -to -Source Voltage (V)
QG Total Gate Charge (nC)
Notes:
Fig 1. Typical On-Resistance Vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET MOSFETs
ƒ Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
Fig 2. Typical On-Resistance Vs. Gate Voltage
„ Starting T_J = 25°C, L = 0.89mH, R_G = 25Ω, I_AS = 5.0A.
† Surface mounted on 1 in. square Cu board, steady state.
‰ T_C measured with thermocouple mounted to top (Drain) of part.
1
11/16/05