IRF6655 Datasheet, PDF (2/10 Pages) International Rectifier – DirectFET Power MOSFET Typical values (unless otherwise specified)

IRF6655
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
V_GS(th)
∆V_GS(th)/∆T_J
I_DSS
Drain-to-Source Breakdown Voltage
100
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
2.8
Gate Threshold Voltage Coefficient
–––
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
6.6
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Q_oss
R_G
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
Total Gate Charge
–––
Pre-Vth Gate-to-Source Charge
–––
Post-Vth Gate-to-Source Charge
–––
Gate-to-Drain Charge
–––
Gate Charge Overdrive
–––
Switch Charge (Q_gs2 + Q_gd)
–––
Output Charge
–––
Gate Resistance
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Output Capacitance
–––
Output Capacitance
–––
Diode Characteristics
Parameter
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Pulsed Source Current
–––
(Body Diode) e
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Typ.
–––
0.12
53
–––
-11
–––
–––
–––
–––
–––
8.7
2.1
0.58
2.8
3.2
3.4
4.5
1.9
7.4
2.8
14
4.3
530
110
29
510
67
Typ.
–––
–––
–––
31
37
Max. Units
Conditions
––– V ^VGS ^{= 0V, I}D ^{= 250µA}
––– V/°C ^{Reference to 25°C, I}D ^{= 1mA}
62 mΩ ^VGS ^{= 10V, I}D ^{= 5.0A g}
4.8
V ^VDS ^{= V}GS^{, I}D ^{= 25µA}
––– mV/°C
20
250
100
-100
–––
µA ^VDS ^{= 100V, V}GS ^{= 0V}
V_DS = 80V, V_GS = 0V, T_J = 125°C
nA ^VGS ^{= 20V}
V_GS = -20V
S ^VDS ^{= 10V, I}D ^{= 5.0A}
11.7
–––
V_DS = 50V
––– nC ^VGS ^{= 10V}
4.2
I_D = 5.0A
–––
See Fig. 17
–––
––– nC ^VDS ^{= 16V, V}GS ^{= 0V}
2.9 Ω
–––
V_DD = 50V, V_GS = 10V g
–––
I_D = 5.0A
––– ns RG=6.0Ω
–––
–––
V_GS = 0V
––– pF ^VDS ^{= 25V}
–––
ƒ = 1.0MHz
–––
V_GS = 0V, V_DS = 1.0V, f=1.0MHz
–––
V_GS = 0V, V_DS = 80V, f=1.0MHz
Max. Units
Conditions
38
MOSFET symbol
D
A showing the
G
34
integral reverse
S
p-n junction diode.
1.3 V ^TJ ^{= 25°C, I}S ^{= 5.0A, V}GS ^{= 0V g}
47 ns ^TJ ^{= 25°C, I}F ^{= 5.0A, V}DD ^{= 25V}
56 nC di/dt = 100A/µs g
Notes:
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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